高溫真空探針臺(tai)KT-Z1604TZ

　　真(zhen)(zhen)空(kong)(kong)探針臺可(ke)實現高真(zhen)(zhen)空(kong)(kong)環境下(xia)的高溫(wen)(wen)(wen)(wen)及(ji)低溫(wen)(wen)(wen)(wen)電學性能測(ce)(ce)量，真(zhen)(zhen)空(kong)(kong)腔一體(ti)成型，具(ju)有設計合理(li)，真(zhen)(zhen)空(kong)(kong)度(du)(du)穩(wen)定(ding)，溫(wen)(wen)(wen)(wen)控(kong)精度(du)(du)及(ji)機械精度(du)(du)高等(deng)特點；根(gen)據(ju)測(ce)(ce)試溫(wen)(wen)(wen)(wen)度(du)(du)范圍不(bu)同(tong)，可(ke)單選高溫(wen)(wen)(wen)(wen)或(huo)低溫(wen)(wen)(wen)(wen)等(deng)相應組(zu)件(jian)，溫(wen)(wen)(wen)(wen)度(du)(du)可(ke)達(da)到400℃，低溫(wen)(wen)(wen)(wen)部(bu)分(fen)采用液氮(dan)或(huo)液氦冷卻(que)組(zu)件(jian)，溫(wen)(wen)(wen)(wen)度(du)(du)可(ke)低至-196℃，；真(zhen)(zhen)空(kong)(kong)系統(tong)可(ke)選機械泵(beng)或(huo)分(fen)子(zi)泵(beng)系統(tong)，真(zhen)(zhen)空(kong)(kong)度(du)(du)可(ke)達(da)到10-3Torr或(huo)10-6Tor。

　　高低溫真(zhen)空探針(zhen)臺應(ying)用(yong)：

　　可應用于低(di)溫或高溫真(zhen)空(kong)環(huan)境下被測(ce)樣品的電(dian)學(xue)性能測(ce)試分(fen)析，如：半導體/微(wei)電(dian)子，電(dian)子，機(ji)電(dian)，物理，化學(xue)，材料，光電(dian)，納米(mi)，微(wei)機(ji)電(dian)/MEMS，生物芯(xin)片，航(hang)空(kong)航(hang)天等科(ke)學(xue)研究領域，以(yi)及IC設計/制(zhi)造/測(ce)試/封裝、LED、LCD/OLED、LD/PD、PCB、FPC等生產制(zhi)造領域。